mcl4148, mcl4448 www.vishay.com vishay semiconductors rev. 2.1, 01-aug-12 1 document number: 85566 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal fast switching diodes mechanical data case: micromelf weight: approx. 12 mg cathode band color: black packaging codes/options: tr3/10k per 13" reel (8 mm tape), 10k/box tr/2.5k per 7" reel (8 mm tape), 12.5k/box features ? silicon epitaxial planar diode ? saving space ? hermetic sealed parts ? fits onto sod-323/sot-23 footprints ? electrical data identical with the devices 1n4148 and 1n4448 respectively ? micromelf package ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? extreme fast switches parts table part type differentiation ordering code internal construction remarks mcl4148 v rrm = 100 v, v f at i f 50 ma = 1 v mcl4148-tr3 or mcl4148-tr single tape and reel mcl4448 v rrm = 100 v, v f at i f 100 ma = 1 v mcl4448-tr3 or mcl4448-tr single tape and reel absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 75 v repetitive peak reverse voltage v rrm 100 v peak forward surge current t p = 1 s i fsm 2a repetitive peak forward current i frm 450 ma forward continuous current i f 200 ma average forward current v r = 0 i fav 150 ma power dissipation p tot 500 mw thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to ambient air mounted on epoxy-glass hard tissue, fig. 5, 35 m copper clad, 0.9 mm 2 copper area per electrode r thja 500 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c
mcl4148, mcl4448 www.vishay.com vishay semiconductors rev. 2.1, 01-aug-12 2 document number: 85566 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse current vs. junction temperature fig. 2 - forward current vs. forward voltage fig. 3 - reverse current vs. reverse voltage fig. 4 - diode capacitance vs. reverse voltage electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol symbol min. typ. max. unit forward voltage i f = 5 ma mcl4448 v f 0.620 0.720 v i f = 50 ma mcl4148 v f 0.860 1 v i f = 100 ma mcl4448 v f 0.930 1 v reverse current v r = 20 v i r 25 na v r = 20 v, t j = 150 c i r 50 a v r = 75 v i r 5a breakdown voltage i r = 100 a, t p /t = 0.01, t p = 0.3 ms v (br) 100 v diode capacitance v r = 0 v, f = 1 mhz, v hf = 50 mv c d 4pf rectification effiency v hf = 2 v, f = 100 mhz ? r 45 % reverse recovery time i f = i r = 10 ma, i r = 1 ma t rr 8 ns i f = 10 ma, v r = 6 v, i r = 0.1 x i r , r l = 100 ? t rr 4 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 i-for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 2.0 16641 mcl 4148 scattering limit t j = 25 c 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 i-for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 2.0 16643 mcl 4448 scattering limit t j =25 c 1 10 100 1000 i r - re v erse c u rrent (na) v r - re v erse v oltage ( v ) 10 1 100 94 9098 t j = 25 c scattering limit 0.1 1 10 0 0.5 1.0 1.5 2.0 3.0 c d - diode capacitance (pf) 100 94 9099 2.5 v r - re v erse v oltage ( v ) f = 1 mhz t j = 25 c
mcl4148, mcl4448 www.vishay.com vishay semiconductors rev. 2.1, 01-aug-12 3 document number: 85566 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - board for r thja definition (in mm) package dimensions in millimeters (inches): micromelf 25 2.5 10 0.71 1.3 1.27 9.9 24 0.152 0.355 95 10329 cathode indification s u rface plan 1 (0.039) glass glass s u rface plan 2 (0.079) 1.8 (0.071) 0.25 (0.010) 0.15 (0.006) 1.2 (0.047) 1.1 (0.043) > r2.5 (0.098) < 1.35 ( 0.053) 0.6 (0.024 ) foot print recommendation: reflo w soldering wa v e soldering 2.4 (0.094) 2.8 (0.110) 0.8 (0.031) 0.8 (0.031) 0.9 (0.035) 0.9 (0.035) 1.2 (0.047) 0.8 (0.031) 1.4 (0.055) 1 (0.039) doc u ment no.:6.560-5007.01-4 re v . 13 - date: 07.j u ne.2006 96 12072 created - date: 26.j u ly.1996 * * the gap bet w een pl u g and glass can be either on cathode or anode side
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